Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Stepped Light-induced Transient Measurements Of Photocurrent And Voltage In Dye-sensitized Solar Cells Based On Zno And Zno:ga|
|Abstract:||In order to explain the higher short-circuit current (Jsc) with comparable open-circuit voltage (Voc) from dye-sensitized solar cells (DSCs) based on gallium-modified ZnO (ZnO:Ga) porous electrodes, the diffusion coefficient (D) and electron lifetime (τ) in DSCs with and without Ga-modified ZnO were studied by stepped light-induced transient measurements of photocurrent and voltage. In comparison to DSCs based on ZnO electrodes, the ZnO:Ga-based solar cells provided lower D and higher τ values. The results were interpreted according to the transport-limited recombination model, where the Ga modification induced a higher density of intraband charge traps. At matched electron densities, a decrease in Voc from DSCs based on ZnO:Ga was observed, suggesting a positive shift of the ZnO:Ga conduction band edge. The higher Jsc can be explained by the positive shift of the ZnO:Ga conduction band edge in addition to the increased roughness factor of the electrode due to the Ga modification. © 2009 American Institute of Physics.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.