Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/92777
Type: Artigo de periódico
Title: Effects Of Ga+ Milling On Ingaasp Quantum Well Laser With Mirrors Milled By Focused Ion Beam
Author: Vallini F.
Figueira D.S.L.
Jarschel P.F.
Barea L.A.M.
Von Zuben A.A.G.
Frateschi N.C.
Abstract: InGaAsP/InP quantum well ridge waveguide lasers were fabricated for the evaluation of Ga+ focused ion beam milling of mirrors. Electrical and optical properties were investigated. A 7% increment in the threshold current, a 17% reduction in the external quantum efficiency, and a 15 nm blueshift in the emission spectrum were observed after milling as compared to the as-cleaved facet result. Annealing in inert atmosphere partially reverts these effects, resulting in a 4% increment in the threshold current, an 11% reduction in the external efficiency, and a 13 nm blueshift with the as-cleaved result. The current-voltage behavior after milling and annealing shows a very small increase in leakage current, indicating that optical damage is the main effect of the milling process. © 2009 American Vacuum Society.
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Rights: aberto
Identifier DOI: 10.1116/1.3207741
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-70349705878&partnerID=40&md5=3ad1bbf78643bc2f955f1e63ad0a379f
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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