Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/92776
Type: Artigo de evento
Title: Resonant Structures Based On Amorphous Silicon Suboxide Doped With Er 3+ With Silicon Nanoclusters For An Efficient Emission At 1550 Nm
Author: Figueira D.S.L.
Mustafa D.
Tessler L.R.
Frateschi N.C.
Abstract: The authors present a resonant approach to enhance 1550 nm emission efficiency of amorphous silicon suboxide doped with Er3+ (a-SiO x 〈Er〉) layers with silicon nanoclusters (Si-NC). Our results show an important result toward enabling the use of silicon-based material for active photonic component fabrication. Two distinct techniques were combined to fabricate a structure that allowed increasing approximately 12 times the 1550 nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx 〈Er〉 matrix was deposited by reactive rf cosputtering. Second, an extra pump channel ( 4I15/2 to 4I9/2) of Er3+ was created due to Si-NC formation on the same a-Si Ox 〈Er〉 matrix via a hard annealing at 1150 °C. The SiO2 and the a-SiOx 〈Er〉 thicknesses were designed to support resonances near the pumping wavelength (∼500 nm), near the Si-NC emission (∼800 nm) and near the a-SiOx 〈Er〉 emission (∼1550 nm) enhancing the optical pumping process. © 2009 American Vacuum Society.
Editor: 
Rights: aberto
Identifier DOI: 10.1116/1.3246406
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-72849106152&partnerID=40&md5=6b9c25991a702f85e82a1d7a064d2e12
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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