Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/92723
Type: Artigo de periódico
Title: Iii-v Semiconductor Nanowire Growth: Does Arsenic Diffuse Through The Metal Nanoparticle Catalyst?
Author: Tizei L.H.G.
Chiaramonte T.
Ugarte D.
Cotta M.A.
Abstract: The synthesis of III-V semiconductor nanowires (NWs) is based on the delivery of atoms from a vapor phase to a catalytic metal nanoparticle (NP). Although there has been extensive work on such systems, the incorporation pathways of group V atoms remain an open issue. Here, we have performed a detailed structural and chemical analysis of the catalyst NP in NWs where we switch the V atomic element during growth (heterostructured InP/InAs/InP NWs). Our experimental results indicate a group V pathway where these atoms actually diffuse through the catalytic NP by formation of a stable phase containing As under growth conditions. We have observed distinct NW growth behavior within a narrow temperature range (30 °C) suggesting a transition between vapor-liquid-solid and vapor-solid-solid growth modes. © 2009 IOP Publishing Ltd.
Editor: 
Rights: fechado
Identifier DOI: 10.1088/0957-4484/20/27/275604
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-67649371229&partnerID=40&md5=14b1f1a25ea192f1f4673e3114166a1d
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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