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|Type:||Artigo de periódico|
|Title:||Quantum Confinement And Magnetic-field Effects On The Electron G Factor In Gaas-(ga, Al)as Cylindrical Quantum Dots|
|Abstract:||We have performed a theoretical study of the quantum confinement (geometrical and barrier potential confinements) and axis-parallel applied magnetic-field effects on the conduction-electron effective Landé g factor in GaAs-(Ga, Al)As cylindrical quantum dots. Numerical calculations of the g factor are performed by using the Ogg-McCombe effective Hamiltonian - which includes non-parabolicity and anisotropy effects - for the conduction-band electrons. The quantum dot is assumed to consist of a finite-length cylinder of GaAs surrounded by a Ga1-xAlxAs barrier. Theoretical results are given as functions of the Al concentration in the Ga 1-xAlxAs barrier, radius, lengths and applied magnetic fields. We have studied the competition between the quantum confinement and applied magnetic field, finding that in this type of heterostructure the geometrical confinement and Al concentration determine the behavior of the electron effective Landé factor, as compared to the effect of the applied magnetic field. Present theoretical results are in good agreement with experimental reports in the limiting geometry of a quantum well, and with previous theoretical findings in the limiting case of a quantum well wire. © 2009 IOP Publishing Ltd.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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