Please use this identifier to cite or link to this item:
Type: Artigo de evento
Title: Ni-p, Ni-b And Sio2 As Materials For Hard Mask In Deep Silicon Etching For Mems Fabrication Using Icp Reactor
Author: Nunes A.M.
Moshkalev S.A.
Fischer C.
Tatsch P.J.
Flacker A.
Abstract: Ni-P, Ni-B and SiO2 films were used as hard mask materials in Si etching using a high-density inductively coupled plasma (ICP) reactor for MEMS fabrication. The Ni-P and Ni-B films were deposited using an electroless method, and the SiO2 film was thermally grown in a conventional furnace. Two etching processes were used to characterize the masks. The first uses SF 6/Ar gas mixture varying bias power and process time, and the second is a Bosch like process, using C4F8 as a passivation gas. The Ni-P mask showed the highest resistance to etching, being applicable in Si deep etching (>100μm); while the SiO2 mask was found to be less resistive, especially under strong ion bombardment (high bias power). The Ni-B mask was found to be highly porous, resulting in formation of micropillars during ecthing, which may be interesting for some apllications such as sensors. © The Electrochemical Society.
Rights: fechado
Identifier DOI: 10.1149/1.3183717
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.