Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/91736
Type: Artigo de evento
Title: Ni-p, Ni-b And Sio2 As Materials For Hard Mask In Deep Silicon Etching For Mems Fabrication Using Icp Reactor
Author: Nunes A.M.
Moshkalev S.A.
Fischer C.
Tatsch P.J.
Flacker A.
Abstract: Ni-P, Ni-B and SiO2 films were used as hard mask materials in Si etching using a high-density inductively coupled plasma (ICP) reactor for MEMS fabrication. The Ni-P and Ni-B films were deposited using an electroless method, and the SiO2 film was thermally grown in a conventional furnace. Two etching processes were used to characterize the masks. The first uses SF 6/Ar gas mixture varying bias power and process time, and the second is a Bosch like process, using C4F8 as a passivation gas. The Ni-P mask showed the highest resistance to etching, being applicable in Si deep etching (>100μm); while the SiO2 mask was found to be less resistive, especially under strong ion bombardment (high bias power). The Ni-B mask was found to be highly porous, resulting in formation of micropillars during ecthing, which may be interesting for some apllications such as sensors. © The Electrochemical Society.
Editor: 
Rights: fechado
Identifier DOI: 10.1149/1.3183717
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-74549113689&partnerID=40&md5=0f2f666435ded1be0e0e2c8668c3d8a7
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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