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|Type:||Artigo de evento|
|Title:||Fabrication And Characterization Of Active Pixel Sensors (aps) Using Simple Metal Gate Nmos Technology|
De Lima Monteiro D.W.
|Abstract:||Active pixel sensors (APS) based on simple nMOS technology with large feature size can offer good sensitivity for photodetection and be a low cost choice for imaging circuits. In this work, we present the design, fabrication and characterization of APSs with 200×200um photodiodes, which presented an ideality factor of 1.05 and a dark current of -150pA at -VDD (-5V). The APS has worked similarly as the SPICE simulations (error below 7%), presenting a 2.3V output voltage range and total discharge time of 48s when in complete darkness. These results indicate that these sensors can have a good performance in application specific circuits, such as position sensitive detectors and wavefront sensors. © The Electrochemical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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