Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/91733
Type: Artigo de evento
Title: Fabrication And Characterization Of Active Pixel Sensors (aps) Using Simple Metal Gate Nmos Technology
Author: Furtado A.S.O.
Diniz J.A.
De Lima Monteiro D.W.
Abstract: Active pixel sensors (APS) based on simple nMOS technology with large feature size can offer good sensitivity for photodetection and be a low cost choice for imaging circuits. In this work, we present the design, fabrication and characterization of APSs with 200×200um photodiodes, which presented an ideality factor of 1.05 and a dark current of -150pA at -VDD (-5V). The APS has worked similarly as the SPICE simulations (error below 7%), presenting a 2.3V output voltage range and total discharge time of 48s when in complete darkness. These results indicate that these sensors can have a good performance in application specific circuits, such as position sensitive detectors and wavefront sensors. © The Electrochemical Society.
Editor: 
Rights: fechado
Identifier DOI: 10.1149/1.3183752
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-74549175212&partnerID=40&md5=14398b9fd4b3787b009d3e537b02d870
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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