Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/91665
Type: Artigo de periódico
Title: Synchrotron X-ray Multiple Diffraction In The Study Of Fe+ Ion Implantation In Si(0 0 1)
Author: Dos Santos A.O.
Lang R.
De Menezes A.S.
Meneses E.A.
Amaral L.
Reboh S.
Cardoso L.P.
Abstract: In this work, x-ray multiple diffraction has been used as a three-dimensional high-resolution probe to study the Fe+ ion implantation process in Si(0 0 1). The semiconducting β-FeSi2 crystallographic phase has been synthesized by Fe ion co-implantation in Si(0 0 1) followed by ion-beam-induced epitaxial crystallization (IBIEC) and thermal treatment. This phase was clearly detected by the conventional techniques, micro-Raman scattering spectroscopy, transmission electron microscopy (TEM) and grazing incidence x-ray diffraction. Synchrotron radiation rocking curves (ω-scans) and mapping of the Bragg surface diffraction (BSD) of the Si matrix, as-implanted, after the IBIEC process and thermally treated, have enabled the detection of co-implanted regions formation that present distinct lattices in comparison with the matrix one clearly observed by TEM. Also, the compressive strain of both regions in depth by rocking curve and in-plane has been determined by using BSD, which is one order of magnitude smaller. © 2009 IOP Publishing Ltd.
Editor: 
Rights: fechado
Identifier DOI: 10.1088/0022-3727/42/19/195401
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-70350624542&partnerID=40&md5=027eb9a40797417ca4b318af2e6bb19f
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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