Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/91122
Type: Artigo de evento
Title: Study Of Raman Spectrum Of Fe Doped Ceo2 Thin Films Grown By Pulsed Laser Deposition
Author: Prakash R.
Kumar S.
Lee C.G.
Sharma S.K.
Knobel M.
Song J.I.
Abstract: Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO 3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F 2g mode at ∼466 cm-1 and defect peak at 489 cm -1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates. © (2010) Trans Tech Publications.
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Rights: fechado
Identifier DOI: 10.4028/www.scientific.net/AMR.123-125.375
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-78650758240&partnerID=40&md5=9e3ff5e46ee8717326d7444a6adf224e
Date Issue: 2010
Appears in Collections:Unicamp - Artigos e Outros Documentos

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