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|Type:||Artigo de evento|
|Title:||Study Of Raman Spectrum Of Fe Doped Ceo2 Thin Films Grown By Pulsed Laser Deposition|
|Abstract:||Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO 3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F 2g mode at ∼466 cm-1 and defect peak at 489 cm -1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates. © (2010) Trans Tech Publications.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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