Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/88980
Type: Artigo de evento
Title: Structural And Electrical Properties Of Ge Nanoparticles Grown By Lpcvd For Mosstructures
Author: Mederos M.
Mestanza S.N.M.
Doi I.
Diniz J.A.
Abstract: Silicon dioxide (SiO2) on Si layer with embedded Germanium (Ge) nanoparticles (nps) were made by Low Pressure Chemical Vapor Deposition (LPCVD). Atomic Force Microscopy (AFM) and Raman spectroscopy has been used to study the Ge distribution on SiO2 films as a function of the different temperatures of growth employed. Layers of Ge-nps at 12 nm-near to the Si/SiO2 interface were formed, where the best result was reposted for the sample grown at 650°C with a density of 7.8×1010 cm-2 and a mean radius of 37 nm. Capacitive-Voltage measurements were performed on metal-oxide-semiconductor structures containing these Ge nps in order to study their electrical properties. The results indicate the existence of memory effect at relative low programming voltage (<6V) due to the presence of Ge-nps near the Si/SiO2 interface. © 2013 IEEE.
Editor: IEEE Computer Society
Rights: fechado
Identifier DOI: 10.1109/SBMicro.2013.6676157
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-84893491294&partnerID=40&md5=aa0b262e8e1790f64c17028941218d96
Date Issue: 2013
Appears in Collections:Unicamp - Artigos e Outros Documentos

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