Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/88910
Type: Artigo de evento
Title: A Monolithic 0.35-μm Sige Class E Power Amplifier Designed At 1.9 Ghz
Author: Dos Santos A.J.S.
Martins E.
Abstract: This paper presents the design of a monolithic 1.9 GHz, Class E, power amplifier (PA) for wireless application with the main components on chip. A cascode topology is used to attenuate transistor stress and to increase the output power, although it compromises the efficiency due to the dissipative process caused by transistor parasitic capacitances. The proposed PA was developed in a single-ended topology because most of the existing components designed use this configuration. The PA was developed in a 0.35-μm SiGe BiCMOS technology with 3.3 Volts which delivers 20.9 dBm output power and 25.5% of power added efficiency (PAE). It also presents a bandwidth of 60 MHz which is suitable for GSM application. Some considerations about the layout are also discussed. © 2013 IEEE.
Editor: 
Rights: fechado
Identifier DOI: 10.1109/IMOC.2013.6646488
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-84887452226&partnerID=40&md5=74de793efb9f4681ad7b8ea7a58d4fd0
Date Issue: 2013
Appears in Collections:Unicamp - Artigos e Outros Documentos

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