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Type: Artigo de evento
Title: Enabling Iii-v Integrated Photonics With Er-doped Al2o3 Films
Author: Jarschel P.F.
Souza M.C.M.M.
Von Zuben A.A.G.
Ramos A.C.
Merlo R.B.
Frateschi N.C.
Abstract: We describe the integration of erbium-doped Al2O3 material with InGaAs/GaAs quantum well lasers emitting at 980 nm, demonstrating the possibility of integrating III-V based pumping lasers and materials suitable for optical amplification and planar photonics. Combining Er-doped materials with III-V compounds is challenging since ion activation usually requires high temperature annealing. In order to demonstrate the compatibility of the two material systems we fabricated laser samples using Er-doped Al2O3 films as insulating material. We compare annealed (800°C) and non-annealed devices and show that laser performance is not affected by the high-temperature annealing.
Editor: Institute of Electrical and Electronics Engineers Inc.
Rights: fechado
Identifier DOI: 10.1109/SBMicro.2014.6940104
Date Issue: 2014
Appears in Collections:Unicamp - Artigos e Outros Documentos

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