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|Type:||Artigo de evento|
|Title:||Enabling Iii-v Integrated Photonics With Er-doped Al2o3 Films|
Von Zuben A.A.G.
|Abstract:||We describe the integration of erbium-doped Al2O3 material with InGaAs/GaAs quantum well lasers emitting at 980 nm, demonstrating the possibility of integrating III-V based pumping lasers and materials suitable for optical amplification and planar photonics. Combining Er-doped materials with III-V compounds is challenging since ion activation usually requires high temperature annealing. In order to demonstrate the compatibility of the two material systems we fabricated laser samples using Er-doped Al2O3 films as insulating material. We compare annealed (800°C) and non-annealed devices and show that laser performance is not affected by the high-temperature annealing.|
|Editor:||Institute of Electrical and Electronics Engineers Inc.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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