Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/87249
Type: Artigo
Title: InGaAs/InAlAs quantum well infrared photodetectors for operation in the 1.7 to 3.1 μm wavelength range
Author: Guerra, L.
Penello, G. M.
Pinto, L. D.
Jakomin, R.
Mourão, R. T.
Pires, M. P.
Degani, M. H.
Maialle, M. Z.
Souza, P. L.
Abstract: InGaAs/InAlAs superlattice structures with a wider central quantum well have been developed for quantum well infrared photodetectors (QWIPs) for operation between 1.7 and 3.1 microns, a range normally unreachable with conventional intraband transitions in this type of material. With this approach the limitation of having bound states only with energies below the barrier no longer holds, therefore it becomes possible to detect energies higher than the upper limit imposed by the bandoffset of the materials. In this work theoretical as well as experimental results on the absorption of such QWIP, which are in excellent agreement, are presented showing photocurrent around 2.6 microns.
InGaAs/InAlAs superlattice structures with a wider central quantum well have been developed for quantum well infrared photodetectors (QWIPs) for operation between 1.7 and 3.1 microns, a range normally unreachable with conventional intraband transitions in
Subject: Computação quântica
Country: Estados Unidos
Editor: Institute of Electrical and Electronics Engineers
Citation: 2014 29th Symposium On Microelectronics Technology And Devices: Chip In Aracaju, Sbmicro 2014. Institute Of Electrical And Electronics Engineers Inc., v. , n. , p. - , 2014.
Rights: fechado
Fechado
Identifier DOI: 10.1109/SBMicro.2014.6940111
Address: https://ieeexplore.ieee.org/document/6940111
Date Issue: 2014
Appears in Collections:FCA - Artigos e Outros Documentos

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