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|Type:||Artigo de periódico|
|Title:||On The Hydrogenated Silicon Carbide (sicx:h) Interlayer Properties Prompting Adhesion Of Hydrogenated Amorphous Carbon (a-c:h) Deposited On Steel|
Maia Da Costa M.E.H.
|Abstract:||This work reports a systematic study of physical-chemical properties of SiCx:H interlayers deposited by using tetramethlysilane on AISI 4140 at different temperatures (100 °C-550 °C) and its effects on the adhesion of a-C:H thin films. The bi-layers were obtained by pulsed-DC PECVD assisted by electrostatic confinement. The results show that the thickness of the SiCx:H interlayer exponentially decreases as the deposition temperature increases, i.e., a thermally activated kinetic process controls the global chemical reaction in the interlayer. There is a transition temperature (∼300 °C) for interlayer deposition where adhesion of a-C:H is reached. Above ∼300 °C, the a-C:H thin films show critical loads to wedge spallation from 298 (300 °C) to 478 mN (550 °C). At higher temperatures, H and Si contents decrease whereas C content increases in the interlayer. The improved adhesion is associated with the nature of chemical bonds formed in the interlayer. © 2014 Elsevier Ltd. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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