Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/87025
Type: Artigo
Title: On the hydrogenated silicon carbide (SiCx:H) interlayer properties prompting adhesion of hydrogenated amorphous carbon (a-C:H) deposited on steel
Author: Cemin, F.
Bim, L. T.
Menezes, C. M.
Aguzzoli, C.
da Costa, M. E. H. M.
Baumvol, I. J. R.
Alvarez, F.
Figueroa, C. A.
Abstract: This work reports a systematic study of physical-chemical properties of SiCx:H interlayers deposited by using tetramethlysilane on AISI 4140 at different temperatures (100 °C-550 °C) and its effects on the adhesion of a-C:H thin films. The bi-layers were obtained by pulsed-DC PECVD assisted by electrostatic confinement. The results show that the thickness of the SiCx:H interlayer exponentially decreases as the deposition temperature increases, i.e., a thermally activated kinetic process controls the global chemical reaction in the interlayer. There is a transition temperature (∼300 °C) for interlayer deposition where adhesion of a-C:H is reached. Above ∼300 °C, the a-C:H thin films show critical loads to wedge spallation from 298 (300 °C) to 478 mN (550 °C). At higher temperatures, H and Si contents decrease whereas C content increases in the interlayer. The improved adhesion is associated with the nature of chemical bonds formed in the interlayer. © 2014 Elsevier Ltd. All rights reserved.
This work reports a systematic study of physical-chemical properties of SiCx:H interlayers deposited by using tetramethlysilane on AISI 4140 at different temperatures (100 °C-550 °C) and its effects on the adhesion of a-C:H thin films. The bi-layers were obtained by pulsed-DC PECVD assisted by electrostatic confinement. The results show that the thickness of the SiCx:H interlayer exponentially decreases as the deposition temperature increases, i.e., a thermally activated kinetic process controls the global chemical reaction in the interlayer. There is a transition temperature (∼300 °C) for interlayer deposition where adhesion of a-C:H is reached. Above ∼300 °C, the a-C:H thin films show critical loads to wedge spallation from 298 (300 °C) to 478 mN (550 °C). At higher temperatures, H and Si contents decrease whereas C content increases in the interlayer. The improved adhesion is associated with the nature of chemical bonds formed in the interlayer.
Subject: Adesão
Carbono amorfo
PECVD
Eletrostática
Country: Reino Unido
Editor: Pergamon Press
Citation: Vacuum. Elsevier Ltd, v. 109, n. , p. 180 - 183, 2014.
Rights: fechado
Identifier DOI: 10.1016/j.vacuum.2014.07.015
Address: https://www.sciencedirect.com/science/article/pii/S0042207X14002516
Date Issue: 2014
Appears in Collections:IFGW - Artigos e Outros Documentos

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