Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Voltage Controlled Electron Spin Dynamics In Resonant Tunnelling Devices|
|Abstract:||We investigate the electron spin dynamics in a p-type GaAs/AlAs resonant tunnelling device by measuring the time- and polarized-resolved photoluminescence (PL) from the GaAs quantum well under a high magnetic field (15 T). The voltage dependence of the PL transients have revealed various tunnelling processes with different time constants that give rise to distinct spin-polarized carriers injected into the double-barrier structure. © 2014 IOP Publishing Ltd.|
|Editor:||Institute of Physics Publishing|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.