Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/86797
Type: Artigo de periódico
Title: Voltage Controlled Electron Spin Dynamics In Resonant Tunnelling Devices
Author: Galeti H.V.A.
Brasil M.J.S.P.
Gobato Y.G.
Henini M.
Abstract: We investigate the electron spin dynamics in a p-type GaAs/AlAs resonant tunnelling device by measuring the time- and polarized-resolved photoluminescence (PL) from the GaAs quantum well under a high magnetic field (15 T). The voltage dependence of the PL transients have revealed various tunnelling processes with different time constants that give rise to distinct spin-polarized carriers injected into the double-barrier structure. © 2014 IOP Publishing Ltd.
Editor: Institute of Physics Publishing
Rights: fechado
Identifier DOI: 10.1088/0022-3727/47/16/165102
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-84898036168&partnerID=40&md5=04d0113a1e87c122c7a44c84183ae323
Date Issue: 2014
Appears in Collections:Unicamp - Artigos e Outros Documentos

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