Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Thermal Conductivity In Higher-order Generalized Hydrodynamics: Characterization Of Nanowires Of Silicon And Gallium Nitride
Author: Rodrigues C.G.
Luzzi R.
Abstract: An analysis of the influence of geometry and size on the thermal conductivity in semiconductors, particularized to the study in Si and GaN, is presented. This is done in the framework of a higher-order generalized hydrodynamics (HOGH) of phonons in semiconductors, driven away from equilibrium by external sources. This HOGH is derived by the method of moments from a generalized Peierls-Boltzmann kinetic equation built in the framework of a Non-Equilibrium Statistical Ensemble Formalism. We consider the case of wires (cylindrical geometry) exploring the effect of size (radius), particularly in the nanometric scale when comparison with experiment is done. Maxwell times, which are quite relevant to define the hydrodynamic movement, are evidenced and characterized. © 2014 Elsevier B.V.
Rights: fechado
Identifier DOI: 10.1016/j.physe.2014.01.031
Date Issue: 2014
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-84896859483.pdf558.02 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.