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|Type:||Artigo de periódico|
|Title:||Effects Of Be Acceptors On The Spin Polarization Of Carriers In P-i-n Resonant Tunneling Diodes|
Galvao Gobato Y.
|Abstract:||In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼-75% at 15T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators. © 2014 AIP Publishing LLC.|
|Editor:||American Institute of Physics Inc.|
|Citation:||Journal Of Applied Physics. American Institute Of Physics Inc., v. 116, n. 5, p. - , 2014.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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