Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Effects Of Be Acceptors On The Spin Polarization Of Carriers In P-i-n Resonant Tunneling Diodes
Author: Awan I.T.
Galeti H.V.A.
Galvao Gobato Y.
Brasil M.J.S.P.
Taylor D.
Henini M.
Abstract: In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼-75% at 15T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators. © 2014 AIP Publishing LLC.
Editor: American Institute of Physics Inc.
Citation: Journal Of Applied Physics. American Institute Of Physics Inc., v. 116, n. 5, p. - , 2014.
Rights: aberto
Identifier DOI: 10.1063/1.4891996
Date Issue: 2014
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-84905977914.pdf1.12 MBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.