Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/85414
Type: Artigo de periódico
Title: Dielectric Mismatch And Shallow Donor Impurities In Gan/hfo2 Quantum Wells
Author: Pereira T.A.S.
Sousa A.A.
Degani M.H.
Farias G.A.
Abstract: In this work we investigate electron-impurity binding energy in GaN/HfO2 quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron-impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schrödinger equation and the results shows how the magnitude of the electron-impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO2 with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.
Editor: Elsevier
Rights: fechado
Identifier DOI: 10.1016/j.physe.2014.10.005
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-84908310885&partnerID=40&md5=bb2f6986163be9ad412bc5358af0d2f7
Date Issue: 2015
Appears in Collections:Unicamp - Artigos e Outros Documentos

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