Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55 mu m laser applications|
|Author:||de Carvalho, W|
|Abstract:||Zero-Net-Strained (ZNS) InGaAsP/InGaAsP/InP Multi Quantum Wells (MQW) structures grown by Low Pressure Metalorganic Vapor Phase Epitaxy for 1.55 mu m laser applications were investigated using atomic force microscopy, photoluminescence spectroscopy and X-ray diffraction. The morphology exhibits a strong anisotropic and modulated behavior. The photoluminescence spectrum shows a broad emission band below the fundamental quantum well transition. The results indicate a strong influence of the growth rate, growth temperature and barrier composition on the surface morphology, and on the optical and structural properties of the ZNS structures. Ridge wave-guide ZNS-MQW laser structures grown at optimized conditions exhibited excellent electro-optic characteristics with low threshold current and high efficiency.|
|Editor:||Sociedade Brasileira Fisica|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.