Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/81893
Type: Artigo de periódico
Title: On the cross-over between 2-dimensional and 3-dimensional growth in Si/Ge-n/Si quantum wells
Author: Narvaez, GA
Araujo-Silva, MA
Cerdeira, F
Bean, JC
Abstract: We report Raman scattering and low temperature photoluminescence measurements performed on a series of Molecular-Beam-Epitaxy-grown Si/Ge-n/Si quantum wells with n varying from 3 to 6. Our results are consistent with a gradual evolution of the Si/Ge interface which starts with Ge segregation and formation of terraces for low Ge coverage, to smooth 2-dimensional Ge layers, bounded by interfacial alloy layers, for coverages superior to 4-monolayers. (C) 1998 Elsevier Science Ltd. All rights reserved.
Subject: quantum wells
optical properties
inelastic light scattering
luminescence
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/S0038-1098(98)00222-1
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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