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|Type:||Artigo de periódico|
|Title:||On the cross-over between 2-dimensional and 3-dimensional growth in Si/Ge-n/Si quantum wells|
|Abstract:||We report Raman scattering and low temperature photoluminescence measurements performed on a series of Molecular-Beam-Epitaxy-grown Si/Ge-n/Si quantum wells with n varying from 3 to 6. Our results are consistent with a gradual evolution of the Si/Ge interface which starts with Ge segregation and formation of terraces for low Ge coverage, to smooth 2-dimensional Ge layers, bounded by interfacial alloy layers, for coverages superior to 4-monolayers. (C) 1998 Elsevier Science Ltd. All rights reserved.|
inelastic light scattering
|Editor:||Pergamon-elsevier Science Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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