Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/81860
Type: Artigo de periódico
Title: On the avalanche multiplication mechanism in SPICE simulations of high-frequency bipolar transistors with thin basewidths and low breakdown voltages
Author: Dias, JAS
Abstract: A very simple subcircuit model for SPICE simulation of bipolar transistors affected by the avalanche multiplication mechanism is presented. The currently available models for bipolar transistors in circuit simulators do not consider this effect, which can lead to serious simulation errors when high-frequency thin basewidths transistors with low and soft breakdown voltages are simulated. The simulated results predicted by SPICE with the proposed subcircuit are compared with the measured data obtained from several transistors with low and soft breakdown voltages and a good agreement is reported. (c) 2005 Elsevier GmbH. All rights reserved.
Subject: avalanche multiplication
SPICE simulation
high-frequency transistors
thin basewidth transistors
low breakdown voltage transistors
Country: Alemanha
Editor: Elsevier Gmbh, Urban & Fischer Verlag
Rights: fechado
Identifier DOI: 10.1016/j.aeure.2005.01.010
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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