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|Type:||Artigo de periódico|
|Title:||Magnetic field effects on donor transitions in quantum wells|
|Abstract:||The effects of an applied magnetic field on the electronic and far-infrared properties of impurity states in donor-doped GaAs-Ga1-xAlxAs quantum wells are studied within a variational scheme in the effective-mass approximation, with the magnetic field applied perpendicular to the quantum-well interfaces. Theoretical calculations for the Is-like hydrogenic ground state, and first excited 2p(+/-)-like states are presented for different values of the magnetic field, and as functions of the quantum-well thickness and position of the donor within the well. The absorption spectra related to 1s-2p(+/-) intradonor transitions for x-polarised radiation are calculated and results are in quite good agreement with previously reported magneto-spectroscopic data.|
impurities in semiconductors
|Editor:||Pergamon-elsevier Science Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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