Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/81416
Type: Artigo de periódico
Title: Magnetic field effects on donor transitions in quantum wells
Author: Barbosa, LHM
Latge, A
Leyva, MD
Oliveira, LE
Abstract: The effects of an applied magnetic field on the electronic and far-infrared properties of impurity states in donor-doped GaAs-Ga1-xAlxAs quantum wells are studied within a variational scheme in the effective-mass approximation, with the magnetic field applied perpendicular to the quantum-well interfaces. Theoretical calculations for the Is-like hydrogenic ground state, and first excited 2p(+/-)-like states are presented for different values of the magnetic field, and as functions of the quantum-well thickness and position of the donor within the well. The absorption spectra related to 1s-2p(+/-) intradonor transitions for x-polarised radiation are calculated and results are in quite good agreement with previously reported magneto-spectroscopic data.
Subject: quantum wells
impurities in semiconductors
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/0038-1098(96)00037-3
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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