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|Type:||Artigo de periódico|
|Title:||REAL-TIME OPTICAL DIAGNOSTICS FOR MEASURING AND CONTROLLING EPITAXIAL-GROWTH|
|Abstract:||We summarize recent applications of two real-time optical diagnostic techniques, reflectance difference spectroscopy (RDS) and spectroellipsometry (SE), to epitaxial growth on GaAs and atomic layer epitaxy (ALE) in particular. Using RDS, we obtain the first real-time spectroscopic data of the evolution of the (001) GaAs surface to cyclic and non-cycle exposures of atmospheric pressure H-2, H-2 and trimethylgallium, and H-2 and arsine, which simulate growth by ALE. None of our observations is consistent with any previously proposed simple model, emphasizing the necessity of real-time measurements for the analysis of complex surface reactions. Using SE we have constructed a closed-loop system for controlling the compositions of AlxGa1-x As layers grown by chemical beam epitaxy. We have produced various graded-compositional structures, including parabolic quantum wells 200 angstrom wide where the composition was controlled by analysis of the running outermost 3 angstrom (about 1 monolayer) of depositing material.|
|Editor:||Elsevier Science Sa|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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