Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/80598
Type: Artigo de periódico
Title: REAL-TIME OPTICAL DIAGNOSTICS FOR MEASURING AND CONTROLLING EPITAXIAL-GROWTH
Author: ASPNES, DE
KAMIYA, I
TANAKA, H
BHAT, R
FLOREZ, LT
HARBISON, JP
QUINN, WE
TAMARGO, M
GREGORY, S
PUDENZI, MAA
SCHWARZ, SA
BRASIL, MJSP
NAHORY, RE
Abstract: We summarize recent applications of two real-time optical diagnostic techniques, reflectance difference spectroscopy (RDS) and spectroellipsometry (SE), to epitaxial growth on GaAs and atomic layer epitaxy (ALE) in particular. Using RDS, we obtain the first real-time spectroscopic data of the evolution of the (001) GaAs surface to cyclic and non-cycle exposures of atmospheric pressure H-2, H-2 and trimethylgallium, and H-2 and arsine, which simulate growth by ALE. None of our observations is consistent with any previously proposed simple model, emphasizing the necessity of real-time measurements for the analysis of complex surface reactions. Using SE we have constructed a closed-loop system for controlling the compositions of AlxGa1-x As layers grown by chemical beam epitaxy. We have produced various graded-compositional structures, including parabolic quantum wells 200 angstrom wide where the composition was controlled by analysis of the running outermost 3 angstrom (about 1 monolayer) of depositing material.
Country: Suíça
Editor: Elsevier Science Sa
Rights: fechado
Identifier DOI: 10.1016/0040-6090(93)90121-5
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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