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Type: Artigo de periódico
Title: Infrared and Raman studies on films of organosiloxane networks produced by PECVD
Author: Trasferetti, BC
Davanzo, CU
de Moraes, MAB
Abstract: The effect of the incorporation of oxygen and nitrogen on the structure of films obtained by PECVD of hexamethyldisiloxane (HMDSO)-He-N-2 and HMDSO-He-O-2 mixtures is investigated using infrared and Raman spectroscopies. From transmittance spectra of films deposited onto single-crystal KBr disks, the transverse optical (TO) and longitudinal optical (LO) functions in the mid-infrared region were calculated. To correlate structural aspects with the observed LO-TO splittings, an identification analysis of functional group based on the infrared and Raman literature was made. It was concluded that the structure of the films deposited from HMDSO-He-O-2 discharges was strongly dependent on the proportion of oxygen in the gas feed. In the absence of oxygen, i.e., for a discharge of a HMDSO-He mixture, the resulting film consisted of a network of interconnected siloxane and carbosilane units. Addition of O-2 precluded the formation of methylene bridges and induced the formation of a material enriched with Si-O-Si groups. Films formed from the HMDSO-He-N-2 plasmas, on the other hand, consisted mainly of interconnected siloxane and carbosilane units in addition to a small quantity of silazane units. On the basis of these results, we propose an interpretation for the variation of the LO-TO splitting amplitude for the asymmetrical stretching mode (AS1) of Si-O in Si-O-Si groups as a function of the oxygen or nitrogen incorporation into the films.
Country: EUA
Editor: Amer Chemical Soc
Rights: fechado
Identifier DOI: 10.1021/ma035297a
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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