Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/80468
Type: Artigo de periódico
Title: Influence of the temperature on the carrier capture into self-assembled InAs/GaAs quantum dots
Author: Duarte, CA
da Silva, ECF
Quivy, AA
da Silva, MJ
Martini, S
Leite, JR
Meneses, EA
Lauretto, E
Abstract: Photoluminescence (PL) spectroscopy and atomic-force microscopy (AFM) were used to investigate the size evolution of InAs quantum dots on GaAs(001) as a function of the amount of InAs material. Different families of islands were observed in the AFM images and unambiguously identified in the PL spectra, together with the signal of the wetting layer. PL measurements carried out at low and intermediate temperatures showed a thermal carrier redistribution among dots belonging to different families. The physical origin of this behavior is explained in terms of the different temperature dependence of the carrier-capture rate into the quantum dots. At high temperatures, an enhancement of the total PL-integrated intensity of the largest-sized quantum dots was attributed to the increase of diffusivity of the photogenerated carriers inside the wetting layer. (C) 2003 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.1568538
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

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