Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/80466
Type: Artigo de periódico
Title: Influence of the substrate thickness and radio frequency on the deposition rate of amorphous hydrogenated carbon a-C : H films
Author: Balachova, OV
Alves, MAR
Swart, JW
Braga, ES
Cescato, L
Abstract: Amorphous hydrogenated carbon a-C:H films were deposited on silicon and quartz substrates in a parallel plate reactor by radio frequency (rf) plasma-enhanced chemical vapor deposition. The deposition rates of the films have been studied in the low-frequency region of the electric field. The Si and quartz substrates of different thickness have been used. The rf and substrate thickness dependencies of the deposition rates are discussed in terms of a theory of ion bombardment. (C) 1999 American Institute of Physics. [S0021-8979(99)07506-4].
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.369681
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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