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|Type:||Artigo de periódico|
|Title:||Influence of the substrate thickness and radio frequency on the deposition rate of amorphous hydrogenated carbon a-C : H films|
|Abstract:||Amorphous hydrogenated carbon a-C:H films were deposited on silicon and quartz substrates in a parallel plate reactor by radio frequency (rf) plasma-enhanced chemical vapor deposition. The deposition rates of the films have been studied in the low-frequency region of the electric field. The Si and quartz substrates of different thickness have been used. The rf and substrate thickness dependencies of the deposition rates are discussed in terms of a theory of ion bombardment. (C) 1999 American Institute of Physics. [S0021-8979(99)07506-4].|
|Editor:||Amer Inst Physics|
|Citation:||Journal Of Applied Physics. Amer Inst Physics, v. 85, n. 6, n. 3345, n. 3347, 1999.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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