Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/80386
Type: Artigo de periódico
Title: REFRACTIVE-INDEX STEP AND OPTICAL CONFINEMENT IN GA0.86IN0.14AS0.13SB0.87/GA0.73AL0.27AS0.02SB0.98 DOUBLE-HETEROSTRUCTURE LASERS EMITTING AT 2.2-MU-M
Author: LOURAL, MSS
MOROSINI, MBZ
HERRERAPEREZ, JL
VONZUBEN, AAG
DASILVEIRA, ACF
PATEL, NB
Abstract: Using theoretical fitting to measured transverse far field patterns in Ga0.86In0.14As0.13Sb0.87/Ga0.73Al0.27As0.02Sb0.98 DH lasers emitting at 2.2 mum we estimated the value of the active layer refractive index as 3.78. This value, higher than assumed earlier based on theoretical calculations, ensures good optical confinement for this kind of heterostructure and provides a good theoretical fit with the authors' experimental data of threshold current density against active layer thickness.
Subject: LASERS
SEMICONDUCTOR LASERS
Country: Inglaterra
Editor: Iee-inst Elec Eng
Rights: fechado
Identifier DOI: 10.1049/el:19930829
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOSA1993LW31700006.pdf173.75 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.