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|Type:||Artigo de periódico|
|Title:||Influence of substrate temperature on formation of an SiC buffer layer by reaction of Si(100) with silane-methane plasma|
|Abstract:||A clean Si(100) surface was reacted at temperatures over the range 750-1050 degreesC with methane-silane-hydrogen plasma. The reaction products on the surface were investigated using x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, infrared absorption spectroscopy and atomic force microscopy. The results indicate that using substrate temperatures higher than 800 degreesC the reaction products on the surface are epitaxial islands that have a beta -silicon carbide crystalline structure. For lower temperatures a more planar layer with a loss in the crystalline quality was observed.|
|Editor:||Iop Publishing Ltd|
|Citation:||Semiconductor Science And Technology. Iop Publishing Ltd, v. 15, n. 12, n. 1115, n. 1118, 2000.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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