Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/80183
Type: Artigo de periódico
Title: Influence of illumination on the quantum mobility of a two-dimensional electron gas in Si delta-doped GaAs/In0.15Ga0.85As quantum wells
Author: Cavalheiro, A
da Silva, ECF
Quivy, AA
Takahashi, EK
Martini, S
da Silva, MJ
Meneses, EA
Leite, JR
Abstract: A series of GaAs/InGaAs quantum wells with a silicon delta-doped layer in the top barrier was investigated by Shubnikov-de Haas measurements as a function of the illumination time of the samples. During the illumination process strong modifications of the electronic density and the quantum mobility of each occupied subband were observed. Based on self-consistent calculations, the dominant mechanism which caused the changes in the subband quantum mobilities with illumination was elucidated.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0953-8984/15/2/312
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000180989100026.pdf423.82 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.