Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/79879
Type: Artigo de periódico
Title: Shallow-impurity states of semiconductor Fibonacci superlattices
Author: Bruno-Alfonso, A
de Dios-Leyva, M
Oliveira, LE
Abstract: A theoretical study of shallow-donor states of GaAs-(Ga,Al)As semiconducting quasiperiodic Fibonacci superlattices is presented. The impurity states are calculated using different variational methods within the parabolic-band model and effective-mass approximation. We deal with periodic superlattices having a Fibonacci sequence of GaAs and (Ga,Al)As layers as unit cells, the size of these sequences being of increasing order. The binding energy and effective mass associated with the Is-like shallow-impurity states of these systems show a dependence on the donor position in the superlattices, which reflects the self-similarity and quasiperiodicity of the Fibonacci superlattices. We present a detailed explanation of the Fibonacci structures of the binding energies as a function of the impurity position in the superlattice and introduce a one-dimensional effective Coulomb potential that should be useful in the study of shallow-impurity states of Fibonacci superlattices, and other quasiperiodic semiconducting heterostructures, under the action of external electric and/or magnetic fields.
Country: EUA
Editor: American Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.57.6573
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000072726400061.pdf132.59 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.