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Type: Artigo de periódico
Title: Shallow-impurity states of semiconductor Fibonacci superlattices
Author: Bruno-Alfonso, A
de Dios-Leyva, M
Oliveira, LE
Abstract: A theoretical study of shallow-donor states of GaAs-(Ga,Al)As semiconducting quasiperiodic Fibonacci superlattices is presented. The impurity states are calculated using different variational methods within the parabolic-band model and effective-mass approximation. We deal with periodic superlattices having a Fibonacci sequence of GaAs and (Ga,Al)As layers as unit cells, the size of these sequences being of increasing order. The binding energy and effective mass associated with the Is-like shallow-impurity states of these systems show a dependence on the donor position in the superlattices, which reflects the self-similarity and quasiperiodicity of the Fibonacci superlattices. We present a detailed explanation of the Fibonacci structures of the binding energies as a function of the impurity position in the superlattice and introduce a one-dimensional effective Coulomb potential that should be useful in the study of shallow-impurity states of Fibonacci superlattices, and other quasiperiodic semiconducting heterostructures, under the action of external electric and/or magnetic fields.
Country: EUA
Editor: American Physical Soc
Citation: Physical Review B. American Physical Soc, v. 57, n. 11, n. 6573, n. 6578, 1998.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.57.6573
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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