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|Type:||Artigo de periódico|
|Title:||Shallow impurities in semiconductor superlattices: A fractional-dimensional space approach|
de Dios-Leyva, M
|Abstract:||A thorough detailed study of donor and acceptor properties in doped GaAs-(Ga,Al)As semiconductor superlattices is performed within the fractional-dimensional approach, in which the real anisotropic 'impurity+semiconductor superlattice' system is modeled through an effective isotropic environment with a fractional dimension. In this scheme, the fractional-dimensional parameter is chosen via an analytical procedure and involves no ansatz, and no fittings either with experiment or with previous variational calculations. The present fractional-dimensional calculated results for the donor and acceptor energies in GaAs-(Ga,Al)As semiconductor superlattices are found in quite good agreement with previous variational calculations and available experimental measurements. (C) 1999 American Institute of Physics. [S0021-8979(99)04408-4].|
|Editor:||Amer Inst Physics|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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