Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Shallow impurities in semiconductor superlattices: A fractional-dimensional space approach
Author: Reyes-Gomez, E
Oliveira, LE
de Dios-Leyva, M
Abstract: A thorough detailed study of donor and acceptor properties in doped GaAs-(Ga,Al)As semiconductor superlattices is performed within the fractional-dimensional approach, in which the real anisotropic 'impurity+semiconductor superlattice' system is modeled through an effective isotropic environment with a fractional dimension. In this scheme, the fractional-dimensional parameter is chosen via an analytical procedure and involves no ansatz, and no fittings either with experiment or with previous variational calculations. The present fractional-dimensional calculated results for the donor and acceptor energies in GaAs-(Ga,Al)As semiconductor superlattices are found in quite good agreement with previous variational calculations and available experimental measurements. (C) 1999 American Institute of Physics. [S0021-8979(99)04408-4].
Country: EUA
Editor: Amer Inst Physics
Citation: Journal Of Applied Physics. Amer Inst Physics, v. 85, n. 8, n. 4045, n. 4049, 1999.
Rights: aberto
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000079848600016.pdf267.07 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.