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Type: Artigo de periódico
Title: Effects of thermally activated hole escape mechanism on the optical and electrical properties in p-type Si delta-doped GaAs(311)A layers
Author: Frizzarini, M
da Silva, ECF
Quivy, AA
Cavalheiro, A
Leite, JR
Meneses, EA
Abstract: a series of periodically spaced p-type delta-doped GaAs(311)A layers, with a doping period varying from 100 to 500 Angstrom, was investigated by Hall effect and photoluminescence measurements in the range of 2 up to 280 K. An enhancement of the Hall mobility by a factor of 5 was observed around 100 K for the structure with the largest period with respect to the one with the smallest period. Photoluminescence measurements carried out at different temperatures revealed that the physical origin of the mobility enhancement was related to the escape of confined holes from the two-dimensional hole gas to the undoped GaAs region between delta-doped layers. Both optical and transport data provided strong evidence of the two-dimensional to three-dimensional transition related to the change from isolated delta wells to a superlattice of delta wells characterized by the formation of minibands.
Country: EUA
Editor: Amer Physical Soc
Citation: Physical Review B. Amer Physical Soc, v. 61, n. 20, n. 13923, n. 13928, 2000.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.61.13923
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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