Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/79614
Type: Artigo de periódico
Title: Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy
Author: de Castro, MPP
von Zuben, AA
Frateschi, NC
Santo, LLE
Galvao, DS
Bettini, J
de Carvalho, MMG
Abstract: We present an investigation of beryllium doping selectivity in InGaP layers grown by chemical beam epitaxy on pre-patterned substrates. We observed a resistivity of 3.1 X 10(-2) and 4.5 x 10(-2) Omega cm for (1 1 1)A planes with the growth at 500degreesC and 540degreesC, respectively. The layers on (0 0 1) planes show a resistivity of 8.9 x 10(-1) Omega cm with the growth at 500degreesC, being essentially undoped with the growth at 540degreesC (.) We show how this strong doping selectivity can be explained by Be3P2 cluster formation growth, which depends on growth temperature and planar crystalline structure. (C) 2004 Elsevier B.V. All rights reserved.
Subject: crystalline structures
impurities
chemical beam epitaxy
semiconducting indium gallium phosphide
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/j.jcrysgro.2004.03.022
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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