Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/79461
Type: Artigo de periódico
Title: Density of impurity states and donor-related optical absorption spectra of GaAs-(Ga,Al)As semiconductor heterostructures
Author: Duque, CA
Montes, A
Porras-Montenegro, N
Oliveira, LE
Abstract: A variational procedure in the effective-mass approximation was used in the study of both the density of donor states and the associated optical absorption spectra of GaAs-(Ga,Al)As semiconductor heterostructures. Calculations were performed for a finite, cylindrical-shaped quantum box of GaAs within the infinite-barrier approximation and considering an homogeneous distribution of impurities within the low-dimensional heterostructure. Theoretical results for the density of impurity states and donor-related optical absorption spectra were found to be in good agreement with previous studies in the Limiting cases of quantum wells and quantum-well wires.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0022-3727/32/24/303
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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