Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/79372
Type: Artigo de periódico
Title: DEFECT-MOLECULE PARAMETERS FOR THE DIVACANCY IN SILICON
Author: GOMES, VMS
ASSALI, LVC
LEITE, JR
FAZZIO, A
CALDAS, MJ
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/0038-1098(85)90064-X
Date Issue: 1985
Appears in Collections:Unicamp - Artigos e Outros Documentos

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