Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/78804
Type: Artigo de periódico
Title: Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga1-xInxAsySb1-y/GaSb (0.07 <= x <= 0.22, 0.05 <= y <= 0.19) quaternary alloys using infrared photoreflectance
Author: Munoz, M
Pollak, FH
Zakia, MB
Patel, NB
Herrera-Perez, JL
Abstract: We have measured the temperature dependence of the energy [E-0(T)] and broadening parameter [Gamma (0)(T)] of the fundamental gap for GaSb and four samples of Ga1-xInxAsySb1-y (lattice matched to GaSb) using infrared photoreflectance. The parameters that describe the temperature variation of the energy (including thermal-expansion effects) were evaluated using both the semiempirical Vashni relation as well as an equation that incorporates the Bose-Einstein occupation factor. The behavior of Gamma (0)(T) was described by a Bose-Einstein-type equation.
Country: EUA
Editor: Amer Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.62.16600
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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