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|Type:||Artigo de periódico|
|Title:||Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga1-xInxAsySb1-y/GaSb (0.07 <= x <= 0.22, 0.05 <= y <= 0.19) quaternary alloys using infrared photoreflectance|
|Abstract:||We have measured the temperature dependence of the energy [E-0(T)] and broadening parameter [Gamma (0)(T)] of the fundamental gap for GaSb and four samples of Ga1-xInxAsySb1-y (lattice matched to GaSb) using infrared photoreflectance. The parameters that describe the temperature variation of the energy (including thermal-expansion effects) were evaluated using both the semiempirical Vashni relation as well as an equation that incorporates the Bose-Einstein occupation factor. The behavior of Gamma (0)(T) was described by a Bose-Einstein-type equation.|
|Editor:||Amer Physical Soc|
|Citation:||Physical Review B. Amer Physical Soc, v. 62, n. 24, n. 16600, n. 16604, 2000.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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