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|Type:||Artigo de periódico|
|Title:||Temperature dependence of excitonic transitions in AlxGa1-xAs/GaAs quantum wells|
|Abstract:||The temperature dependence of excitonic transitions in double quantum well heterostructures in the temperature range of 2-300 K were investigated. A crossing between excitonic transition experimental curves as a function of temperature in quantum wells of the same thickness and different barrier height is observed. The influence of the barrier height on the temperature dependence of excitonic states in the quantum wells is analyzed. (C) 2001 Academic Press.|
|Editor:||Academic Press Ltd|
|Appears in Collections:||Artigos e Materiais de Revistas Científicas - Unicamp|
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