Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/78798
Type: Artigo de periódico
Title: Temperature dependence of excitonic transitions in AlxGa1-xAs/GaAs quantum wells
Author: Lourenco, SA
Dias, IFL
Duarte, JL
Laureto, E
Iwamoto, H
Meneses, EA
Leite, JR
Abstract: The temperature dependence of excitonic transitions in double quantum well heterostructures in the temperature range of 2-300 K were investigated. A crossing between excitonic transition experimental curves as a function of temperature in quantum wells of the same thickness and different barrier height is observed. The influence of the barrier height on the temperature dependence of excitonic states in the quantum wells is analyzed. (C) 2001 Academic Press.
Subject: quantum wells
excitons
electron-phonon interaction
Country: Inglaterra
Editor: Academic Press Ltd
Rights: fechado
Identifier DOI: 10.1006/spmi.2000.0959
Date Issue: 2001
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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