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|Type:||Artigo de periódico|
|Title:||Cathodoluminescence and structural studies of nitrided 3D gallium structures grown by MOCVD|
|Abstract:||Cathodoluminescence (CL) spectrum imaging and grazing incidence X-ray diffraction (GIXRD) are employed to investigate nitride three-dimensional (3D) gallium structures. The metallic precursors are naturally obtained on a large variety of substrates by metal-organic chemical vapor deposition (CVD) with different shape/size controlled by the growth conditions, especially the temperature. These 3D metallic structures are subsequently exposed to a nitridation process in a conventional CVD reactor to form GaN nanocrystals, as confirmed by GIXRD measurements. CL spectroscopy shows visible light emission (2.5-2.8 eV) excited from the GaN in the 3D structures. (C) 2008 Elsevier B.V. All rights reserved.|
GaN 3D structure
|Editor:||Elsevier Science Bv|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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