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|Type:||Artigo de periódico|
|Title:||Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well|
|Abstract:||We studied the carrier-spin polarization in an n-type modulation-doped single quantum well. The sample shows a high electron concentration and the second electron subband is marginally occupied. Photoluminescence and photoluminescence excitation were performed in the continuous-wave regime. The results reveal a polarization profile determined by the hole relaxation. A higher degree of polarization was observed for the luminescence related to the recombination of electrons in the second conduction subband. This suggests that the photo-created electrons localized close to the Fermi level maintain their polarization. (C) 1999 Academic Press.|
|Editor:||Academic Press Ltd|
|Citation:||Superlattices And Microstructures. Academic Press Ltd, v. 25, n. 3, n. 551, n. 554, 1999.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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