Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/78473
Type: Artigo de periódico
Title: Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well
Author: Triques, ALC
Iikawa, F
Brum, JA
Maialle, MZ
Pereira, RG
Borghs, G
Abstract: We studied the carrier-spin polarization in an n-type modulation-doped single quantum well. The sample shows a high electron concentration and the second electron subband is marginally occupied. Photoluminescence and photoluminescence excitation were performed in the continuous-wave regime. The results reveal a polarization profile determined by the hole relaxation. A higher degree of polarization was observed for the luminescence related to the recombination of electrons in the second conduction subband. This suggests that the photo-created electrons localized close to the Fermi level maintain their polarization. (C) 1999 Academic Press.
Subject: semiconductor
quantum well
spin polarization
Country: Inglaterra
Editor: Academic Press Ltd
Rights: fechado
Identifier DOI: 10.1006/spmi.1996.0236
Date Issue: 1999
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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