Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Carrier dynamics in stacked InP/GaAs quantum dots
Author: Veloso, AB
Nakaema, MKK
de Godoy, MPF
Lopes, JMJ
Iikawa, F
Brasil, MJSP
Bortoleto, JRR
Cotta, MA
Fichtner, PFP
Morschbacher, M
Madureira, JR
Abstract: We investigated two stacked layers of InP/GaAs type-II quantum dots by transmission electron microscopy and optical spectroscopy. The results reveal that InP quantum dots formed in two quantum dot layers are more uniform than those from a single layer structure. The thermal activation energies as well as the photoluminescence decays are rather independent of the separation between quantum dot layers and the presence of the second layer. The quantum dot optical emission persists for thermal activation energy larger than the calculated exciton binding energy. The photoluminescence decay is relatively fast for type-II alignment.
Country: EUA
Editor: Amer Inst Physics
Citation: Applied Physics Letters. Amer Inst Physics, v. 91, n. 12, 2007.
Rights: aberto
Identifier DOI: 10.1063/1.2789705
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000249667200042.pdf541.67 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.