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|Type:||Artigo de periódico|
|Title:||TIME-RESOLVED PHOTOLUMINESCENCE OF POROUS SILICON - EVIDENCE FOR TUNNELING LIMITED RECOMBINATION IN A BAND OF LOCALIZED STATES|
|Abstract:||Time resolved photoluminescence of porous silicon at room temperature was measured for several emission energies under 2 ns nitrogen laser excitation. For each emission energy studied there is a broad distribution of lifetimes extending over a few decades. The mean value of the distribution varies with the emission energy, from 3 (2.77 eV) to 50 mus (1.96 eV). The results can be explained by assuming a tunneling limited recombination mechanism between bands of localized states. We associate this behavior with a superficial disordered Si:O:H compound rather than with quantum confinement effects.|
|Editor:||Amer Inst Physics|
|Citation:||Applied Physics Letters. Amer Inst Physics, v. 62, n. 19, n. 2381, n. 2383, 1993.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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