Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/77597
Type: Artigo de periódico
Title: ANODICALLY GROWN POROUS SILICON STRUCTURE - FORMATION MECHANISMS
Author: SOARES, DM
DOSSANTOS, MC
TESCHKE, O
Abstract: It is experimentally shown, in porous silicon formation, that there is an increase in dissolution rate at fluorine-covered sites of the silicon surface due to the presence of excess electrons coming from the oxidation of molecular hydrogen at hydrogen-covered sites. The increase in dissolution rate in the presence of excess charge at the fluorine-covered sites is investigated theoretically by a semi-empirical Hartree-Fock calculation which shows that this spatially variable dissolution generates the porous silicon structure.
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/0009-2614(95)00700-E
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOSA1995RP85300032.pdf396.82 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.