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|Type:||Artigo de periódico|
|Title:||Transient transport in III-nitrides: interplay of momentum and energy relaxation times|
|Abstract:||The ultrafast transient transport in wide-gap polar III-nitride semiconductors in electric fields is considered. A nonlinear and time-dependent (on the evolution of the nonequilibrium-irreversible thermodynamic state of the system) Drude-like law is derived, with the conductivity related to a so-called transport time (or current characteristic time which is related to a memory-dependent momentum relaxation time). From the collision operators, present in the evolution equations for the carriers' energy and momentum, are obtained quantities playing the role of time-dependent energy and momentum relaxation times. The electron drift velocity overshoot at intermediate-intensity fields in GaN, AlN and InN is evidenced, and its onset is explained as a result of the interplay of momentum and energy relaxation times.|
|Editor:||Iop Publishing Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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