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|Type:||Artigo de periódico|
|Title:||Anisotropic etching of silicon for a micromachining application using plasmas of SF6/CH4/O-2/Ar and SF6/CF4/O-2/Ar|
|Abstract:||We investigated the reactive ion etching of silicon using SF6/CH4(CF4)/O-2/Ar gas mixtures containing fluorine for MEMS applications. Etch rates and anisotropy of etch profiles were examined as a function of gas composition, material of electrode, and RF power. Etch depths were measured using a profilometer, and etch profiles were analyzed by scanning electron microscope. As a mask material, an aluminium film deposited by evaporation, was used. High anisotropy of etching of 0.95 was achieved at etch depths up to 20-30 micrometers and etch rates of approximately 0.3-0.6 mum/min. Highly anisotropic etching is based on a mechanism that enhance the ion bombarding and protects the sidewalls due to polymerization and/or oxidation mechanisms in order to avoid the lateral etch. However, under the anisotropic etching conditions, considerable damages of the etched surfaces (roughness formation), were observed. After etching experiments, wet / dry cleaning procedures were applied to remove surface residues resulting from the reactive ion etching and to improve the etched surface morphology.|
|Editor:||Sociedad Mexicana De Fisica|
|Citation:||Revista Mexicana De Fisica. Sociedad Mexicana De Fisica, v. 50, n. 2, n. 203, n. 207, 2004.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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