Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/77155
Type: Artigo de periódico
Title: Alloying mechanisms for epitaxial nanocrystals
Author: Leite, MS
Medeiros-Ribeiro, G
Kamins, TI
Williams, RS
Abstract: The different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this Letter. Intermixing during growth, surface diffusion, and intraisland diffusion were investigated by varying the growth conditions and annealing environments during chemical vapor deposition. The relative importance of each mechanism was evaluated in determining a particular composition profile for dome-shaped Ge:Si (001) islands. For samples grown at a faster rate, intermixing during growth was reduced. Si surface diffusion dominates during H-2 annealing, whereas Ge surface diffusion and intraisland diffusion prevail during annealing in a PH3 environment.
Country: EUA
Editor: American Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevLett.98.165901
Date Issue: 2007
Appears in Collections:Unicamp - Artigos e Outros Documentos

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