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|Type:||Artigo de periódico|
|Title:||Alloying mechanisms for epitaxial nanocrystals|
|Abstract:||The different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this Letter. Intermixing during growth, surface diffusion, and intraisland diffusion were investigated by varying the growth conditions and annealing environments during chemical vapor deposition. The relative importance of each mechanism was evaluated in determining a particular composition profile for dome-shaped Ge:Si (001) islands. For samples grown at a faster rate, intermixing during growth was reduced. Si surface diffusion dominates during H-2 annealing, whereas Ge surface diffusion and intraisland diffusion prevail during annealing in a PH3 environment.|
|Editor:||American Physical Soc|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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