Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/77001
Type: Artigo de periódico
Title: Tridimension structural characterization of porous silicon by transmission electron microscopy and Raman scattering
Author: Ribeiro, E
Cerdeira, F
Teschke, O
Abstract: Porous silicon structures are modeled based on their bidimensional images obtained by transmission electron microscopy and Raman spectroscopy. Connected (wire diameters similar to 15 Angstrom) and isolated silicon structures show different Raman line shapes. Comparing experimental spectra with those simulated by models appropriate for each type of structure, we obtain results consistent with cylindrical nanocrystals with a 3:1 length-to-diameter ratio and average diameters of similar to 50 Angstrom for both connected and isolated structures. Copyright (C) 1996 Elsevier Science Ltd
Subject: semiconductors
nanostructures
scanning and transmission electron microscopy
optical properties
phonons
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/S0038-1098(96)00572-8
Date Issue: 1997
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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