Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Type-I optical emissions in Ge/Si quantum dots|
|Abstract:||The authors studied the optical emission of Ge/Si quantum dots under externally applied biaxial stress using samples grown with different temperatures varying from 430 to 700 degrees C. The optical emission energy of samples grown at low temperatures is rather insensitive to the applied external stress, consistent with the type-II band alignment. However, for samples grown at high temperatures we observed a large blueshift, which suggests type-I alignment. The result implies that recombination strength can be controlled by the growth temperature, which can be useful for optical device applications. (c) 2007 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.