Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/76618
Type: Artigo de periódico
Title: A Patterning-Based Strain Engineering for Sub-22 nm Node FinFETs
Author: Schmidt, M
Suess, MJ
Barros, AD
Geiger, R
Sigg, H
Spolenak, R
Minamisawa, RA
Abstract: We propose a strain engineering approach that is based on the patterning and under etching of fins using strained Si grown on SiGe strain relaxed buffers. The method enhances the strain of the patterned Fins up to similar to 2.9 GPa without the need of epitaxial source and drain stressors. We report a systematic simulation study on the scaling of this method for the present and future technology nodes down to 7 nm. Finally, we estimate that the technique deliveries an electron mobility enhancement up to 87% for FinFETs, independent of the technology node.
Subject: Strained Si
FinFet
strain-relaxed-buffer
scaling
simulations
Country: EUA
Editor: Ieee-inst Electrical Electronics Engineers Inc
Rights: fechado
Identifier DOI: 10.1109/LED.2014.2300865
Date Issue: 2014
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.