Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/76221
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dc.contributor.CRUESPUniversidade Estadual de Campinaspt
dc.typeArtigo de periódicopt
dc.titleVoltage controlled electron spin dynamics in resonant tunnelling devicespt
dc.contributor.authorGaleti, HVApt
dc.contributor.authorBrasil, MJSPpt
dc.contributor.authorGobato, YGpt
dc.contributor.authorHenini, Mpt
unicamp.author.emailyara.ufscar@gmail.compt
unicamp.authorGaleti, H. V. A. Univ Fed Sao Carlos, Dept Engn Eletr, BR-13565905 Sao Carlos, SP, Brazilpt
unicamp.authorBrasil, M. J. S. P. Univ Estadual Campinas, UNICAMP, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazilpt
unicamp.authorGalvao Gobato, Y. Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Carlos, SP, Brazilpt
unicamp.authorHenini, M. Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, Englandpt
dc.subjecttime-resolved photoluminescencept
dc.subjectpolarized-resolved photoluminescencept
dc.subjectspintronicspt
dc.subjectresonant tunnelling diodespt
dc.subjectmagneto-transportpt
dc.subject.wosDouble-quantum Wellspt
dc.subject.wosInjectionpt
dc.subject.wosPhotoluminescencept
dc.subject.wosSemiconductorspt
dc.description.abstractWe investigate the electron spin dynamics in a p-type GaAs/AlAs resonant tunnelling device by measuring the time-and polarized-resolved photoluminescence (PL) from the GaAs quantum well under a high magnetic field (15 T). The voltage dependence of the PL transients have revealed various tunnelling processes with different time constants that give rise to distinct spin-polarized carriers injected into the double-barrier structure.
dc.relation.ispartofJournal Of Physics D-applied Physics
dc.relation.ispartofabbreviationJ. Phys. D-Appl. Phys.pt
dc.publisher.cityBristolpt
dc.publisher.countryInglaterrapt
dc.publisherIop Publishing Ltdpt
dc.date.issued2014pt
dc.date.monthofcirculationAPR 25pt
dc.identifier.citationJournal Of Physics D-applied Physics. Iop Publishing Ltd, v. 47, n. 16, 2014.pt
dc.language.isoenpt
dc.description.volume47pt
dc.description.issuenumber16pt
dc.rightsfechadopt
dc.rights.licensehttp://iopscience.iop.org/page/copyrightpt
dc.sourceWeb of Sciencept
dc.identifier.issn0022-3727pt
dc.identifier.eissn1361-6463pt
dc.identifier.wosidWOS:000333745000003pt
dc.identifier.doi10.1088/0022-3727/47/16/165102pt
dc.description.sponsorshipUK Engineering and Physical Sciences Research Councilpt
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt
dc.description.sponsorshipCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)pt
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt
dc.description.sponsorship1Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt
dc.description.sponsorship1Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)pt
dc.description.sponsorship1Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt
dc.description.sponsordocumentnumberFAPESP [12/24055-6, 11/20985-6]pt
dc.date.available2014-08-01T18:15:58Z
dc.date.available2015-11-26T17:54:42Z-
dc.date.accessioned2014-08-01T18:15:58Z
dc.date.accessioned2015-11-26T17:54:42Z-
dc.description.provenanceMade available in DSpace on 2014-08-01T18:15:58Z (GMT). No. of bitstreams: 0 Previous issue date: 2014en
dc.description.provenanceMade available in DSpace on 2015-11-26T17:54:42Z (GMT). No. of bitstreams: 0 Previous issue date: 2014en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/76221
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/76221-
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