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|Type:||Artigo de periódico|
|Title:||Voltage controlled electron spin dynamics in resonant tunnelling devices|
|Abstract:||We investigate the electron spin dynamics in a p-type GaAs/AlAs resonant tunnelling device by measuring the time-and polarized-resolved photoluminescence (PL) from the GaAs quantum well under a high magnetic field (15 T). The voltage dependence of the PL transients have revealed various tunnelling processes with different time constants that give rise to distinct spin-polarized carriers injected into the double-barrier structure.|
resonant tunnelling diodes
|Editor:||Iop Publishing Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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