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Type: Artigo de periódico
Title: Voltage controlled electron spin dynamics in resonant tunnelling devices
Author: Galeti, HVA
Brasil, MJSP
Gobato, YG
Henini, M
Abstract: We investigate the electron spin dynamics in a p-type GaAs/AlAs resonant tunnelling device by measuring the time-and polarized-resolved photoluminescence (PL) from the GaAs quantum well under a high magnetic field (15 T). The voltage dependence of the PL transients have revealed various tunnelling processes with different time constants that give rise to distinct spin-polarized carriers injected into the double-barrier structure.
Subject: time-resolved photoluminescence
polarized-resolved photoluminescence
resonant tunnelling diodes
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0022-3727/47/16/165102
Date Issue: 2014
Appears in Collections:Unicamp - Artigos e Outros Documentos

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