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Type: Artigo
Title: Voltage controlled electron spin dynamics in resonant tunnelling devices
Author: Galeti, H. V. A.
Brasil, M. J. S. P.
Gobato, Y. G.
Henini, M.
Abstract: We investigate the electron spin dynamics in a p-type GaAs/AlAs resonant tunnelling device by measuring the time-and polarized-resolved photoluminescence (PL) from the GaAs quantum well under a high magnetic field (15 T). The voltage dependence of the PL transients have revealed various tunnelling processes with different time constants that give rise to distinct spin-polarized carriers injected into the double-barrier structure.
Subject: Spintrônica
Movimento rotacional
Country: Reino Unido
Editor: Institute of Physics Publishing
Citation: Journal Of Physics D-applied Physics. Iop Publishing Ltd, v. 47, n. 16, 2014.
Rights: fechado
Identifier DOI: 10.1088/0022-3727/47/16/165102
Date Issue: 2014
Appears in Collections:IFGW - Artigos e Outros Documentos

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